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Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

Vincenzo de Michele 1, 2 Emmanuel Marin 1 Aziz Boukenter 1 Marco Cannas 2 Sylvain Girard 1 Youcef Ouerdane 1 
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 Università degli studi di Palermo - University of Palermo
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https://hal-ujm.archives-ouvertes.fr/ujm-03271883
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Sunday, June 27, 2021 - 9:57:13 PM
Last modification on : Saturday, June 25, 2022 - 10:57:29 AM

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UNIV-ST-ETIENNE | CNRS | UDL

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Vincenzo de Michele, Emmanuel Marin, Aziz Boukenter, Marco Cannas, Sylvain Girard, et al.. Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure. physica status solidi (a), Wiley, 2021, pp.2000802. ⟨10.1002/pssa.202000802⟩. ⟨ujm-03271883⟩

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