Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure - Université Jean-Monnet-Saint-Étienne Access content directly
Journal Articles physica status solidi (a) Year : 2021

Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

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ujm-03271883 , version 1 (27-06-2021)

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Vincenzo de Michele, Emmanuel Marin, Aziz Boukenter, Marco Cannas, Sylvain Girard, et al.. Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure. physica status solidi (a), 2021, pp.2000802. ⟨10.1002/pssa.202000802⟩. ⟨ujm-03271883⟩
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