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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure
Vincenzo de Michele
1, 2
Emmanuel Marin
1
Aziz Boukenter
1
Marco Cannas
2
Sylvain Girard
1
Youcef Ouerdane
1
Vincenzo de Michele 1, 2
Author
Emmanuel Marin 1
Author
Aziz Boukenter 1
Author
Marco Cannas 2
Author
Sylvain Girard 1
Author
Youcef Ouerdane 1
Author
1
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
Document type :
Journal articles
Domain :
Complete list of metadata
https://hal-ujm.archives-ouvertes.fr/ujm-03271883
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Sunday, June 27, 2021 - 9:57:13 PM
Last modification on : Tuesday, July 13, 2021 - 3:18:50 AM
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Sunday, June 27, 2021 - 9:57:13 PM
Last modification on : Tuesday, July 13, 2021 - 3:18:50 AM
Identifiers
- HAL Id : ujm-03271883, version 1
- DOI : 10.1002/pssa.202000802
Collections
UNIV-ST-ETIENNE | IOGS | CNRS | UDL | PARISTECH
Citation
Vincenzo de Michele, Emmanuel Marin, Aziz Boukenter, Marco Cannas, Sylvain Girard, et al.. Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure. physica status solidi (a), Wiley, 2021, pp.2000802. ⟨10.1002/pssa.202000802⟩. ⟨ujm-03271883⟩
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