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Journal articles
Origin of area selective plasma enhanced chemical vapor deposition of microcrystalline silicon
Abstract : Plasma Enhanced Chemical Vapor Deposition of silicon from SiF4/H2/Ar gas mixture is observed on a SiOxNy surface, while under the same plasma conditions, silicon films do not grow on AlOx nor Al surfaces. Transmission electron microscopy confirms that the silicon deposited on SiOxNy has a microcrystalline structure. After the plasma process, fluorine is detected in abundance on the AlOx surface by X-ray photoelectron spectroscopy and energy dispersive X-ray chemical analyses. This suggests that Al-F bonds are formed on this surface, blocking any deposition of silicon on it. In-situ ellipsometry studies show that deposition can be initiated on AlOx surfaces by increasing the temperature of the electrodes or increasing the RF plasma power, leading to a loss of selectivity.
https://hal.archives-ouvertes.fr/hal-03060642
Contributor : Erik Johnson <>
Submitted on : Monday, December 14, 2020 - 9:50:30 AM
Last modification on : Wednesday, February 24, 2021 - 3:27:35 AM
Contributor : Erik Johnson <>
Submitted on : Monday, December 14, 2020 - 9:50:30 AM
Last modification on : Wednesday, February 24, 2021 - 3:27:35 AM
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