Abstract : A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.1338 - 1346. 〈10.1109/TNS.2011.2144622〉
https://hal-ujm.archives-ouvertes.fr/ujm-01011671
Contributeur : Sylvain Girard
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Soumis le : mardi 24 juin 2014 - 12:00:07
Dernière modification le : jeudi 15 novembre 2018 - 08:38:45
L. Artola, G. Hubert, K. Warren, M. Gaillardin, R.D Shrimpf, et al.. SEU prediction from SET Modeling using multi-node collection in Bulk transistors and SRAMs down to the 65nm technology node. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.1338 - 1346. 〈10.1109/TNS.2011.2144622〉. 〈ujm-01011671〉
