Skip to Main content Skip to Navigation
Journal articles

SEU prediction from SET Modeling using multi-node collection in Bulk transistors and SRAMs down to the 65nm technology node

L. Artola 1 G. Hubert 1 K. Warren 2 M. Gaillardin 3 R.D Shrimpf 2 R.A. Reed 2 R. A. Weller 2 J.R. Ahlbin 2 Philippe Paillet 3 Melanie Raine 3 Sylvain Girard 3 Sophie Duzellier 4 L. Massengill 5 F. Bezerra 6
1 ONERA - The French Aerospace Lab [Toulouse]
2 Vanderbilt University [Nashville]
3 DAM/DIF - DAM Île-de-France
4 ONERA - The French Aerospace Lab [Palaiseau]
5 VUSE - Vanderbilt University School of Engineering [Nashville]
6 CNES - Centre National d'Études Spatiales [Toulouse]
Abstract : A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs.
Document type :
Journal articles
Complete list of metadata
https://hal-ujm.archives-ouvertes.fr/ujm-01011671
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Tuesday, June 24, 2014 - 12:00:07 PM
Last modification on : Tuesday, March 16, 2021 - 3:44:42 PM

Identifiers

Collections

CEA | ONERA | UNIV-ST-ETIENNE | DAM | UDL

Citation

L. Artola, G. Hubert, K. Warren, M. Gaillardin, R.D Shrimpf, et al.. SEU prediction from SET Modeling using multi-node collection in Bulk transistors and SRAMs down to the 65nm technology node. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (3), pp.1338 - 1346. ⟨10.1109/TNS.2011.2144622⟩. ⟨ujm-01011671⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Les métriques sont temporairement indisponibles