SEU prediction from SET Modeling using multi-node collection in Bulk transistors and SRAMs down to the 65nm technology node

L. Artola (1) , G. Hubert (1) , K. Warren (2) , M. Gaillardin (3) , R.D Shrimpf (2) , R.A. Reed (2) , R. A. Weller (2) , J.R. Ahlbin (2) , Philippe Paillet (3) , Melanie Raine (3) , Sylvain Girard (3) , Sophie Duzellier (4) , L. Massengill (5) , F. Bezerra (6)

1 ONERA - The French Aerospace Lab [Toulouse]
2 Vanderbilt University [Nashville]
3 DAM/DIF - DAM Île-de-France
4 ONERA - The French Aerospace Lab [Palaiseau]
5 VUSE - Vanderbilt University School of Engineering [Nashville]
6 CNES - Centre National d'Études Spatiales [Toulouse]

A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs.

Domaines: Sciences de l'ingénieur [physics]

L. Artola, G. Hubert, K. Warren, M. Gaillardin, R.D Shrimpf, et al.. SEU prediction from SET Modeling using multi-node collection in Bulk transistors and SRAMs down to the 65nm technology node. IEEE Transactions on Nuclear Science, 2011, 58 (3), pp.1338 - 1346. ⟨10.1109/TNS.2011.2144622⟩. ⟨ujm-01011671⟩